| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MSM5718B70 |
18-Megabit RDRAM (2M x 9)
|
OKI electronic components
|
| K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
| MSM5718B70 |
18-Megabit RDRAM (2M x 9) 18兆位的RDRAM米9
|
OKI SEMICONDUCTOR CO., LTD.
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG[Samsung semiconductor]
|
| K4R881869I-DC |
Direct RDRAM Product Guide
|
Samsung semiconductor
|
| K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
|
| KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung semiconductor
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| HYR166449G-845 HYR163249G HYR163249G-653 HYR163249 |
?64MB RIMM Module (32Mx16) PC800-45?
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) 直接的RDRAM RIMM的模块（88兆RDRAMs
128MB RIMM Module (64Mx16) PC800-40
RDRAMModules - 128MB RIMM Module (64Mx16) PC600-53 Discontinued
RDRAMModules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx16) PC800-45 Discontinued
|
INFINEON[Infineon Technologies AG]
|
